Hot carrier luminescence during porous etching of GaP under high electric field conditions

Electroluminescence is observed during porous etching of n-type GaP single crystals at strongly positive potential. The emission spectra, which include a supra-bandgap contribution, are markedly different from the spectra observed under optical excitation or minority carrier injection. The current density and electroluminescence intensity show a strong potential dependence and a similar hysteresis. The spectral characteristics of the luminescence suggest that both thermalised and hot charge carriers, generated by impact ionisation, are involved in light emission. 2003 Elsevier Science B.V. All rights reserved.